FDMC86102L mosfet equivalent, n-channel mosfet.
* Shielded Gate MOSFET Technology
* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A
* Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A
* Low Profile − 1 mm Max .
* DC−DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain t.
This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
Features
* Shie.
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